GS-065-008-1-L 650V E-mode GaN transistor

GaN Systems

Description

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The GS-065-008-1-L is an enhancement mode GaNon-Silicon power transistor.

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Datasheet Specifications

Part number: GS-065-008-1-L
Manufacturer: GaN Systems
File Size: 1.00 MB
Datasheet: GS-065-008-1-L-GaNSystems.pdf
Description: 650V E-mode GaN transistor

Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, small 5x6 mm PDFN package
* RDS(on) = 225 mΩ
* IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A
* Ultra-low FOM
* Simple gate drive requirements (0 V to

Applications

* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance Motor Drives
* Wireless Power Transfer

GS-065-008-1-L Distributors

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GS-065-008-1-L 650V E-mode GaN transistor GaN Systems

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