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GS-065-008-1-L 650V E-mode GaN transistor

GS-065-008-1-L Description

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The GS-065-008-1-L is an enhancement mode GaNon-Silicon power transistor.

GS-065-008-1-L Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, small 5x6 mm PDFN package
* RDS(on) = 225 mΩ
* IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A
* Ultra-low FOM
* Simple gate drive requirements (0 V to

GS-065-008-1-L Applications

* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance Motor Drives
* Wireless Power Transfer

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Datasheet Details

Part number
GS-065-008-1-L
Manufacturer
GaN Systems
File Size
1.00 MB
Datasheet
GS-065-008-1-L-GaNSystems.pdf
Description
650V E-mode GaN transistor

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650V E-mode GaN transistor GaN Systems
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