Datasheet Details
Part number:
IGT8E21, IGT8D21
Manufacturer:
GE
File Size:
285.71 KB
Description:
Insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: IGT8E21, IGT8D21.
Please refer to the document for exact specifications by model.
IGT8E21, IGT8D21, Insulated Gate Bipolar Transistor
mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV.
RDS(ON) =0.145 n.
This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors.
The device design and gate characteristics ofthe IGT'II Transistor are als
IGT8E21 Features
* Low VCE(SAT) - 2..5V typ @ 20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'
📁 Related Datasheet
📌 All Tags
