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IGT8D21 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT8D21
Manufacturer	GE
File Size	285.71 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT8D21-GE.pdf

IGT8D21 Product details

Features

Low VCE(SAT) - 2..5V typ @ 20A.
Ultra-fast turn-on -150 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247.

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Published: Feb 11, 2019 |