Datasheet Details
Part number:
IGT8E20, IGT8D20
Manufacturer:
GE
File Size:
290.75 KB
Description:
Insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: IGT8E20, IGT8D20.
Please refer to the document for exact specifications by model.
IGT8E20, IGT8D20, Insulated Gate Bipolar Transistor
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate characteristics of the IGT'M Transi
IGT8E20 Features
* Low VCE(SAT) - 2.3V typ @ 20A
* Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC =
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