MMG3009NT1 Datasheet (Freescale Semiconductor) - Heterojunction Bipolar Transistor

MMG3009NT1, Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6.

ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 *A114) Machine Model (per EIA/JESD 22 *A115) Charge Device Model (per JESD 22 *C101) Table 7.

Moisture Sensitivity Level Test

LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3009NT1 is a general purpose amplifier that is internally input and output matched.

It is designed for a broad range of Class A, small signal, high linearity, general purpose applications.

It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF,

MMG3009NT1 Features

* Frequency: 0 to 6000 MHz

* P1dB: 18 dBm @ 900 MHz

* Small

* Signal Gain: 15 dB @ 900 MHz

* Third Order Output Intercept Point: 34 dBm @ 900 MHz

* Single 5 V Supply

* Internally Matched to 50 Ohms

* Cost

* effective SOT

* 89 Surface Mount Plastic Packag