FPDA200V Datasheet (Filtronic Compound Semiconductors) - HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

FPDA200V, HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic

FPDA200V Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 12.5 dB Power Gain at 18 GHz

* 55% Power-Added Efficiency

* Source Vias to Backside Metallization FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS GATE BOND PAD DRAIN BOND PAD DIE SIZE: 15.6X13.2 mils (395x335