FPD10000V Datasheet (Filtronic) - 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS

FPD10000V, 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS

AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW * The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.

PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) 30 dBm Output Power, < 2.5% EVM 9.5 dB Power Gain Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN Class B Efficiency 18% (8V / 300 mA IDQ) BOND PAD BOND PAD 39 dBm CW Output Power (16X) (16X) > 48 dBm 3rd Order Intercept Point Plated Source Vias No Source wirebonds needed 2.5

FPD10000V Features

* Source thru-vias. 16 bonds each side, Gate and Drain. ¾ User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001

* 0.002 in. (0.025

* 0.050 mm) fillet of die attach material all