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FPD3000 - 2W POWER PHEMT

The FPD3000 by Filtronic Compound Semiconductors is a 2W POWER PHEMT. Below is the official datasheet preview.

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Official preview page of the FPD3000 2W POWER PHEMT datasheet (Filtronic Compound Semiconductors).

Datasheet Details

Part number FPD3000
Manufacturer Filtronic Compound Semiconductors
File Size 213.66 KB
Description 2W POWER PHEMT
Datasheet download datasheet FPD3000_FiltronicCompoundSemiconductors.pdf
Additional preview pages of the FPD3000 datasheet.

FPD3000 Product details

Description

AND APPLICATIONS DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.The recessed and offset Gate structure minimizes parasitics to optimize performance.The epitaxial structure and processing have been optimized for reliable high-power applications.The FPD3000 also featur

Features

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