FPD750DFN Datasheet (Filtronic Compound Semiconductors) - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750DFN, LOW NOISE HIGH LINEARITY PACKAGED PHEMT

The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.

The recessed and offset Gate structure minimizes parasitics to optimize

FPD750DFN Features

* (1850MHZ):

* 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant Datasheet v3.0 PACKAGE: RoHS 9 TYPICAL APPLICATIONS: