FPD750SOT89 Datasheet (Filtronic Compound Semiconductors) - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750SOT89, LOW NOISE HIGH LINEARITY PACKAGED PHEMT

The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.

The double recessed gate structure minimizes parasitics to optimize per

FPD750SOT89 Features

* (1.85GHZ):

* Datasheet 3.0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www.DataSheet4U.com