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FPD750SOT343 - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

Description

The www.DataSheet4U.com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate.

The Filtronic 0.25µm process ensures class-leading noise performance.

Features

  • (1850MHZ):.
  • 0.5 dB N. F. min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC) Datasheet v3.0 ROHS: 9.

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Datasheet Details

Part number FPD750SOT343
Manufacturer Filtronic Compound Semiconductors
File Size 810.15 KB
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet download datasheet FPD750SOT343 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FPD750SOT343 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): • • • • • 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC) Datasheet v3.0 ROHS: 9 GENERAL DESCRIPTION: The www.DataSheet4U.com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for cost effective system implementation. TYPICAL APPLICATIONS: • • • 802.11a,b,g and WiMax LNAs PCS/Cellular High Linearity LNAs Other types of wireless infrastructure systems.