FPD1000V Datasheet (Filtronic)

FPD1000V, 1W POWER PHEMT

AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.

The FPD1000V includes Source plated thru-vi

FPD1000V Features

* (1.8 GHz)

* 31 dBm Linear Output Power

* 16 dB Power Gain

* Useable Gain to 10 GHz

* 41 dBm Output IP3

* Maximum Stable Gain of 20 dB

* 50% Power-Added Efficiency

* 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER