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SSH7N60B - 600V N-Channel MOSFET

SSH7N60B Description

SSH7N60B November 2001 SSH7N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSH7N60B Features

* 7.3A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
* Low gate charge ( typical 38 nC)
* Low Crss ( typical 23 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability G DS TO-3P SSH Series G! D ! ! #" ! ! ! S Absolute Maximum Ratings TC = 25

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600V N-Channel MOSFET Fairchild Semiconductor
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