Datasheet4U Logo Datasheet4U.com

SSH25N40A - Advanced Power MOSFET

SSH25N40A Description

www.DataSheet4U.com Advanced Power MOSFET .

SSH25N40A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 400V Low RDS(ON) : 0.162 Ω (Typ. ) SSH25N40A BVDSS = 400 V RDS(on) = 0.2 Ω ID = 25 A TO-3P 1 2 3 1.Gate 2. Drain 3. Sourc

📥 Download Datasheet

Preview of SSH25N40A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSH25N40 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
  • SSH25N35 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
  • SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
  • SSH210 - Surface Mount Schottky Barrier Rectifier (Taiwan Semiconductor)
  • SSH10N60A - advanced power MOSFET (Fairchild)
  • SSH10N60B - 600V N-Channel MOSFET (Fairchild)
  • SSH10N70 - N-Channel Power MOSFET (Samsung)
  • SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)

📌 All Tags

Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSH25N40A-like datasheet