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SSH10N90A - N-CHANNEL POWER MOSFET

SSH10N90A Description

N-CHANNEL POWER MOSFET SSH10N90A .

SSH10N90A Features

* BVDSS = 900V
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max. ) @ VDS = 900V Lower RDS(ON): 0.938Ω (Typ. ) 1 2 3 RD

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N-CHANNEL POWER MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSH10N90A-like datasheet