Datasheet Details
- Part number
- SSH10N80A
- Manufacturer
- Samsung
- File Size
- 209.61 KB
- Datasheet
- SSH10N80A-Samsung.pdf
- Description
- Advanced Power MOSFET
SSH10N80A Description
Advanced Power MOSFET .
SSH10N80A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. )
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Chara
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