Datasheet4U Logo Datasheet4U.com

SSH10N80A Datasheet - Samsung

SSH10N80A, Advanced Power MOSFET

Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

SSH10N80A-Samsung.pdf

Preview of SSH10N80A PDF
SSH10N80A Datasheet Preview Page 2 SSH10N80A Datasheet Preview Page 3

Datasheet Details

Part number:

SSH10N80A

Manufacturer:

Samsung

File Size:

209.61 KB

Description:

Advanced power mosfet.

SSH10N80A Distributors

📁 Related Datasheet

📌 All Tags

Samsung SSH10N80A-like datasheet