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SSH10N60B - 600V N-Channel MOSFET

SSH10N60B Description

SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSH10N60B Features

* 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! TO-3P G DS SSH Series ! S Absolute Maximum

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Datasheet Details

Part number
SSH10N60B
Manufacturer
Fairchild
File Size
680.51 KB
Datasheet
SSH10N60B_Fairchild.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild
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