SSH70N10A Datasheet - Fairchild Semiconductor

SSH70N10A, Advanced Power MOSFET

Advanced Power MOSFET SSH70N10A

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR E

SSH70N10A-FairchildSemiconductor.pdf