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IRFM220B 200V N-Channel MOSFET

IRFM220B Description

IRFM220B November 2001 IRFM220B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFM220B Features

* 1.13A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS I

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFM220B-like datasheet