IRFM220A Datasheet - Fairchild Semiconductor

IRFM220A, Advanced Power MOSFET

Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. ) IRFM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Sou

IRFM220A_FairchildSemiconductor.pdf