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IRFM210B 200V N-Channel MOSFET

IRFM210B Description

IRFM210B November 2001 IRFM210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFM210B Features

* 0.77A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFM210B-like datasheet