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IRFM214B 250V N-Channel MOSFET

IRFM214B Description

IRFM214B November 2001 IRFM214B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFM214B Features

* 0.64A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capability D D ! " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

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250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFM214B-like datasheet