Datasheet4U Logo Datasheet4U.com

IRFM210A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) IRFM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25oC ) Continuous Drain Current (TA=70 oC ) D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFM240 N-CHANNEL POWER MOSFET Seme LAB
IRFM240 POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier
IRFM250 POWER MOSFET International Rectifier
IRFM250 N-CHANNEL POWER MOSFET Seme LAB
IRFM250D N-CHANNEL POWER MOSFET Seme LAB

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFM210B 200V N-Channel MOSFET
IRFM214B 250V N-Channel MOSFET
IRFM220A Advanced Power MOSFET
IRFM220B 200V N-Channel MOSFET
IRFM224B 250V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) IRFM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3.
Published: |