IRFM210A Datasheet - Fairchild Semiconductor

IRFM210A, Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) IRFM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Sou

IRFM210A_FairchildSemiconductor.pdf