EM567168 Datasheet (Etron Technology)

EM567168, 2M x 16 Pseudo SRAM

Symbol A0 * A20 DQ0 * DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12 NC A16 DQ4 VSS

EM567168 Features

* Organized as 2M words by 16 bits

* Fast Cycle Time : 55ns, 70ns

* Standby Current : 100uA

* Deep power-down Current : 10uA (Memory cell data invalid)

* Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)

* Compatible with low power SRAM

* Single