EM562161 Datasheet PDF (128K x 16 Low Power SRAM) | Download Etron Technology EM562161

EM562161 - 128K x 16 Low Power SRAM

Description

Symbol A0 - A16 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection A LB # O E# A0 A1 A2 CE 2 B DQ 8 UB # A3 A4 CE1 # DQ 0

Features

Single power supply voltage of 2.7V to 3.6V.
Power down features using CE1# and CE2.
Low operating current : 30mA(max for 55 ns).
Maximum Standby current : 10µA at 3.6 V.
Data retention supply voltage: 1.5V to 3.6V.
Direct TTL compatibility for all input and output.
Wide operating temperature range: -40°C to 85°C.
Package type: 48-ball TFBGA, 6x8mm EM562161 128K x 16 Low Power SRAM Preliminary, Rev 1.0 07/2001 circuit tec.

Datasheet Details

Part number	EM562161
Manufacturer	Etron Technology
File Size	140.13 KB
Description	128K x 16 Low Power SRAM
Datasheet	EM562161 Datasheet

📁 Similar Datasheet

EM56200A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM56000A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM56001A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM56101A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM56300A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM56400A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

EM564081 - 512K x 8 Low Power SRAM (Etron Technology Inc.)

EM564161 - 256K x 16 Low Power SRAM (Etron Technology Inc.)

EM564166 - 256K x 16 Low Power SRAM (Etron Technology Inc.)

EM56500A - TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER (ELAN Microelectronics Corp)

Full PDF Text Transcription

Click to expand full text

EtronTech Features • Single power supply voltage of 2.7V to 3.6V • Power down features using CE1# and CE2 • Low operating current : 30mA(max for 55 ns) • Maximum Standby current : 10µA at 3.6 V • Data retention supply voltage: 1.5V to 3.6V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Package type: 48-ball TFBGA, 6x8mm EM562161 128K x 16 Low Power SRAM Preliminary, Rev 1.0 07/2001 circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access.

Published: May 17, 2007 |