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F59L2G81KA-25BCG2N, F59L2G81KA 2-Gbit 3.3V NAND Flash Memory

F59L2G81KA-25BCG2N Description

ESMT Flash .
The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 21.

F59L2G81KA-25BCG2N Features

* Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)
* Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block Size: 64Pages = (128K + 8K) bytes ­ Number of Block per Die (LUN)= 2048
* Automatic Program and Erase ­ Page Program: (2K + 128) bytes ­ Block Erase: (128K +

F59L2G81KA-25BCG2N Applications

* such as solid state file storage, voice recording, image file memory for still cameras and other systems which require high density non-volatile memory data storage. Elite Semiconductor Microelectronics Technology Inc. Publication Date: Apr. 2021 Revision: 1.1 1/60 ESMT F59L2G81KA (2N) Operati

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: F59L2G81KA-25BCG2N, F59L2G81KA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
F59L2G81KA-25BCG2N, F59L2G81KA
Manufacturer
ESMT
File Size
1.34 MB
Datasheet
F59L2G81KA-ESMT.pdf
Description
2-Gbit 3.3V NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: F59L2G81KA-25BCG2N, F59L2G81KA.
Please refer to the document for exact specifications by model.

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2-Gbit 3.3V NAND Flash Memory ESMT
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