F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

F59L2G81A Description

ESMT Flash .
The device is a 256Mx8bit with spare 16Mx8bit capacity.

F59L2G81A Features

* Voltage Supply: 3.3V (2.7V ~ 3.6V)
* Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte
* Page Read Operation - Page Size: (2K + 64) bytes - Random Read

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F59L2G81A Datasheet Preview — Preview of F59L2G81A PDF

Datasheet Details

Part number: F59L2G81A
Manufacturer: Elite Semiconductor
File Size: 1.56 MB
Datasheet: F59L2G81A-EliteSemiconductor.pdf
Description: 2 Gbit (256M x 8) 3.3V NAND Flash Memory

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Gbit 256M 3.3V NAND Flash Memory Elite Semiconductor

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