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F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Description

Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Features

  • z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ. ) - Block Erase time: 1.5ms (Typ. ) z Command/Address/Data Multiplexed I/O Port z Hardware Data P.

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Datasheet Details

Part number F59L1G81A
Manufacturer Elite Semiconductor
File Size 1.00 MB
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L1G81A Datasheet

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Full PDF Text Transcription

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ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ.) - Block Erase time: 1.5ms (Typ.
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