F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Elite Semiconductor

Description

ESMT Flash .
The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity).

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Datasheet Specifications

Part number: F59D1G81A
Manufacturer: Elite Semiconductor
File Size: 1.17 MB
Datasheet: F59D1G81A-EliteSemiconductor.pdf
Description: 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)
* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

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F59D1G81A Gbit 128M 64M 1.8V NAND Flash Memory Elite Semiconductor

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