Datasheet Details
Part number:
F59D2G81A
Manufacturer:
Elite Semiconductor
File Size:
1.54 MB
Description:
2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory.
F59D2G81A-EliteSemiconductor.pdf
Datasheet Details
Part number:
F59D2G81A
Manufacturer:
Elite Semiconductor
File Size:
1.54 MB
Description:
2 gbit (256m x 8 / 128m x 16) 1.8v nand flash memory.
F59D2G81A, 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity).
The device is offered in 1.8V VCC Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased in
F59D2G81A Features
* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Era
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