F59D1G161MB, F59D1G81MB-45TG2M Datasheet - ESMT

F59D1G161MB 1.8V NAND Flash Memory

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59D1G161MB Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81MB-45TG2M-ESMT.pdf

F59D1G161MB Datasheet Preview — This datasheet PDF includes multiple part numbers: F59D1G161MB, F59D1G81MB-45TG2M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

F59D1G161MB, F59D1G81MB-45TG2M

Manufacturer:

ESMT

File Size:

2.37 MB

Description:

1.8v nand flash memory.

Note:

This datasheet PDF includes multiple part numbers: F59D1G161MB, F59D1G81MB-45TG2M.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MB-45BG2M 1.8V NAND Flash Memory (ESMT)

F59D1G161MB-45TG2M 1.8V NAND Flash Memory (ESMT)

F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

TAGS

F59D1G161MB F59D1G81MB-45TG2M 1.8V NAND Flash Memory ESMT

F59D1G161MB Distributor