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F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81MB-25TG2M Description

ESMT Flash .
The device is a 128Mx8bit with spare 4Mx8bit capacity.

F59L1G81MB-25TG2M Features

* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25

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Datasheet Details

Part number
F59L1G81MB-25TG2M
Manufacturer
ESMT
File Size
2.01 MB
Datasheet
F59L1G81MB-25TG2M-ESMT.pdf
Description
1 Gbit (128M x 8) 3.3V NAND Flash Memory

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📌 All Tags

Gbit 128M 3.3V NAND Flash Memory ESMT
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