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CY62167G - 16-Mbit (1M Words x 16 Bit) Static RAM

Description

CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1].

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Features

  • Ultra-low standby current.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • 48-pin TSOP I package con.

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Other Datasheets by Cypress

Full PDF Text Transcription

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CY62167G/CY62167GE MoBL 16-Mbit (1M words × 16-bit/ 2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1M words × 16-bit/2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby current ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.
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