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CY62168G/CY62168GE MoBL®
16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC)
16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC)
Features
■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A
■ High speed: 45 ns/55 ns
■ Embedded error-correcting code (ECC) for single-bit error correction
■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
■ 1.0 V data retention
■ Transistor-transistor logic (TTL) compatible inputs and outputs
■ ERR pin to indicate 1-bit error detection and correction
■ Available in Pb-free 48-ball VFBGA package
Functional Description
CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
CY62168G Datasheet
