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CY62162G/CY62162GE MoBL
16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC)
16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC)
Features
■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A
■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error
correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 119-ball PBGA package, 512K × 32 bits
SRAM
Functional Description
The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.
CY62162GE Datasheet
