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CY62167DV30 - 16-Mbit (1M x 16) Static RAM

Description

of Read and Write modes.

The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits.

Features

  • Very high speed: 55 ns.
  • Wide voltage range: 2.20V.
  • 3.60V.
  • Ultra-low active power.
  • Typical active current: 2 mA @ f = 1 MHz.
  • Typical active current: 15 mA @ f = fmax.
  • Ultra-low standby power.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Packages offered in a 48-ball BGA and 48-pin TSOPI reduces power consumption by 99% whe.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62167DV18 16M (1024K x 16) Static RAM
CY62167DV20 16-Mb (1024K x 16) Static RAM
CY62167E 16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167EV18 16-Mbit (1M x 16) Static RAM
CY62167EV30 16-Mbit (1M x 16 / 2M x 8) Static RAM

Full PDF Text Transcription

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www.DataSheet4U.com CY62167DV30 MoBL 16-Mbit (1M x 16) Static RAM Features • Very high speed: 55 ns • Wide voltage range: 2.20V – 3.60V • Ultra-low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fmax • Ultra-low standby power • Easy memory expansion with CE1, CE2, and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball BGA and 48-pin TSOPI reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).
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