CY62146G Datasheet 4-Mbit (256K words x 16 bit) Static RAM

Manufacturer: Cypress (now Infineon)

CY62146G 4-mbit (256k words x 16 bit) static ram by Cypress (now Infineon) - Datasheet Preview

Datasheet Details

Part number	CY62146G
Manufacturer	Cypress (now Infineon)
File Size	578.01 KB
Description	4-Mbit (256K words x 16 bit) Static RAM
Download	CY62146G Download (PDF)

General Description

CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

The CY62146GE/CY62146GESL device includes an ERR pin that signals an error-detection and correction event during a read cycle.

Overview

CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code.

Key Features

High speed: 45 ns/55 ns.
Ultra-low standby power.
Typical standby current: 3.5 A.
Maximum standby current: 8.7 A.
Embedded ECC for single-bit error correction[1].
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
1.0-V data retention.
TTL-compatible inputs and outputs.
Error indication (ERR) pin to indicate 1-bit error detection and correction.
Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

📁 Similar Datasheet

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CY62146CV18	256K x 16 Static RAM	Cypress Semiconductor
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CY62146E	4-Mbit (256K x 16) Static RAM	Cypress Semiconductor
CY62146ESL	4-Mbit (256K x 16) Static RAM	Cypress Semiconductor
CY62146EV30	4-Mbit (256K x 16) Static RAM	Cypress Semiconductor

More Datasheets from Cypress (now Infineon)

Part Number	Description
CY62146G-MoBL	4-Mbit (256K words x 16 bit) Static RAM
CY62146GE	4-Mbit (256K words x 16 bit) Static RAM
CY62146GESL	4-Mbit (256K words x 16 bit) Static RAM
CY62146GN	4-Mbit (256K x 16) Static RAM
CY62146GSL	4-Mbit (256K words x 16 bit) Static RAM
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