CY62146ESL Datasheet 4-Mbit (256K x 16) Static RAM

Manufacturer: Cypress (now Infineon)

Datasheet Details

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Functional Description The CY62146ESL is a high performance CMOS static RAM organized as 256K words by 16 bits.

CY62146ESL MoBL® 4-Mbit (256K x 16) Static RAM.

Very high speed: 45 ns Wide voltage range: 2.2V.
3.6V and 4.5V.
5.5V Ultra low standby power.
Typical Standby current: 1 μA.
Maximum Standby current: 7 μA Ultra low active power.
Typical active current: 2 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II package mode reduces power consumption by more than 99% when deselected (CE HI.

Part Number	Description	Manufacturer
CY62146DV30	4M Bit Static RAM	Cypress
CY62146G	4-Mbit (256K words x 16 bit) Static RAM	Cypress
CY62146G-MoBL	4-Mbit (256K words x 16 bit) Static RAM	Cypress
CY62146GE	4-Mbit (256K words x 16 bit) Static RAM	Cypress
CY62146GESL	4-Mbit (256K words x 16 bit) Static RAM	Cypress