CY7C1145KV18, CY7C1143KV18 - 18-Mbit QDR II+ SRAM Four-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1145KV18, CY7C1143KV18
Manufacturer	Cypress Semiconductor
File Size	646.01 KB
Description	18-Mbit QDR II+ SRAM Four-Word Burst Architecture
Datasheet	CY7C1143KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1145KV18, CY7C1143KV18. Please refer to the document for exact specifications by model.

Separate independent read and write data ports.
Supports concurrent transactions.
450-MHz clock for high bandwidth.
Four-word burst for reducing address bus frequency.
Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz.
Available in 2.0 clock cycle latency.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Echo clocks (CQ and CQ) simplify data capture in high-speed sys.

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Published: Mar 14, 2017 |