CGHV1F025S Datasheet - Cree

CGHV1F025S GaN HEMT

RES, 100, OHM, +1/-1%, 1/16 W, 0603 RES, 10, OHM, +1/-1%, 1/16 W, 0603 CAP, 1pF, ±0.1 pF, 0603, ATC CAP, 1.8pF, ±0.1 pF, 0603, ATC CAP, 0.6pF, ±0.1 pF, 0603, ATC CAP, 10 pF, ±5%, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0 UF, 100V, 10%, X7R, 1210 CAP, 10 UF, 16.

CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN.

CGHV1F025S Features

* Up to 15 GHz Operation

* 25 W Typical Output Power

* 11 dB Gain at 9.4 GHz

* Application circuit for 8.9 - 9.6 GHz Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rati

CGHV1F025S Datasheet (966.88 KB)