C2M0045170P Silicon Carbide Power MOSFET

Cree

Description

VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C2M0045170P
Manufacturer: Cree
File Size: 968.44 KB
Datasheet: C2M0045170P-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive

Applications

* 1500V Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC converters
* Pulsed Power Applications 1 234 D SSG Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Part Number C2M0045170P Package TO-247-4 Plus Marking C

C2M0045170P Distributors

📁 Related Datasheet

C2M0045170D C2M0040120D C2M0025120D C2M1000170J

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C2M0045170P Silicon Carbide Power MOSFET Cree

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