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C2M1000170J - Silicon Carbide Power MOSFET

C2M1000170J Description

C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode .

C2M1000170J Features

* High blocking voltage with low RDS(on) Easy to parallel and simple to drive
* Low parasitic inductance
* Low impedance package
* Separate driver source pin
* Ultra-low drain-gate capacitance
* Halogen-Free, RoHS compliant

C2M1000170J Applications

* Auxiliary power supplies
* Switch Mode Power Supplies
* High-voltage capacitive loads Package VDS ID @ 25˚C RDS(on) 1700 V 5.3 A 1.0 Part Number C2M1000170J Package TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test C

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Datasheet Details

Part number
C2M1000170J
Manufacturer
Cree
File Size
2.24 MB
Datasheet
C2M1000170J-Cree.pdf
Description
Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET Cree
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