C2M0080120D Silicon Carbide Power MOSFET

Cree

Description

VDS 1200 V C2M0080120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 36 A 80 mΩ N-Channel Enhancement Mode Fe.

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Datasheet Specifications

Part number: C2M0080120D
Manufacturer: Cree
File Size: 818.44 KB
Datasheet: C2M0080120D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Halogen Free, RoHS Compliant Benefits
* Higher System Efficiency
* Reduced Co

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC Converters
* Battery Chargers
* Motor Drives
* Pulsed Power applications Part Number C2M0080120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol

C2M0080120D Distributors

📁 Related Datasheet

C2M0025120D C2M0040120D C2M0045170D C2M0045170P

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C2M0080120D Silicon Carbide Power MOSFET Cree

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