Datasheet Details
- Part number
- C2M0080170P
- Manufacturer
- Cree
- File Size
- 798.79 KB
- Datasheet
- C2M0080170P-Cree.pdf
- Description
- Silicon Carbide Power MOSFET
C2M0080170P Description
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode .
C2M0080170P Features
* Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Easy to parallel and simple to drive
C2M0080170P Applications
* 1500V Solar Inverters
* Switch Mode Power Supplies
* High voltage DC/DC Converters
* Capacitor discharge
1 234 D SSG
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Part Number C2M0080170P
Package TO-247-4 Plus
Marking C2M0080
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