C2M0045170D Silicon Carbide Power MOSFET

Cree

Description

VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C2M0045170D
Manufacturer: Cree
File Size: 725.88 KB
Datasheet: C2M0045170D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Resistant to Latch-Up
* Halogen Free, RoHS Compliant Benefits
* Higher System Efficiency
* Re

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC converters
* Motor Drive
* Pulsed Power Applications Part Number C2M0045170D Package TO-247-3 Marking C2M0045170 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Param

C2M0045170D Distributors

📁 Related Datasheet

C2M0045170P C2M0040120D C2M0025120D C2M1000170J

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C2M0045170D Silicon Carbide Power MOSFET Cree

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