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NE66719 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE66719 Description

www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR .

NE66719 Features

* HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.6±0.1 0.8±0.1 1.6±0.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer

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Datasheet Details

Part number
NE66719
Manufacturer
California Eastern Labs
File Size
303.92 KB
Datasheet
NE66719_CaliforniaEasternLabs.pdf
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR California Eastern Labs
California Eastern Labs NE66719-like datasheet