Datasheet4U Logo Datasheet4U.com

NE66219 NPN SILICON RF TRANSISTOR

NE66219 Description

NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE * HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 160.

NE66219 Features

* Suitable for high-frequency oscillation
* fT = 25 GHz technology adopted
* 3-pin ultra super minimold (19, 1608 PKG) package ORDERING INFORMATION Part Number NEC66219 2SC5606 NE66219-T1 2SC5606-T1 Order Number NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A Package 3-pin

📥 Download Datasheet

Preview of NE66219 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE66219
Manufacturer
California Eastern Labs
File Size
329.13 KB
Datasheet
NE66219-CaliforniaEasternLabs.pdf
Description
NPN SILICON RF TRANSISTOR

📁 Related Datasheet

  • NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
  • NE662M16 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
  • NE662M16-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
  • NE662M16-T3-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE661M04 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
  • NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
  • NE664M04-A - NPN SILICON RF TRANSISTOR (CEL)

📌 All Tags

California Eastern Labs NE66219-like datasheet