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NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NE661M04 Description

DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.

NE661M04 Features

* Low noise and high gain with low collector current
* NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
* Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
* fT = 25 GHz technology
* Flat-lead 4-pin thin super mini-mold

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Datasheet Details

Part number
NE661M04
Manufacturer
NEC
File Size
70.64 KB
Datasheet
NE661M04_NEC.pdf
Description
NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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📌 All Tags

NPN SILICON TRANSISTOR FOR LOW CURRENT LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
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