NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR

California Eastern Labs

Description

www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR .
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

📥 Download Datasheet

NE663M04 Datasheet Preview — Preview of NE663M04 PDF

Datasheet Specifications

Part number: NE663M04
Manufacturer: California Eastern Labs
File Size: 407.63 KB
Datasheet: NE663M04_CaliforniaEasternLabs.pdf
Description: NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a

Applications

* from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE663M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. D

NE663M04 Distributors

📁 Related Datasheet

NE661M04 NE661M04-T2 NE662M04 NE662M16 NE662M16-A NE662M16-T3

📌 All Tags

NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR California Eastern Labs

California Eastern Labs NE663M04-like datasheet

NE66219

NE664M04

NE66719