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NE662M16-T3 NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M16-T3 Description

NPN SILICON HIGH FREQUENCY TRANSISTOR .
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process.

NE662M16-T3 Features

* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE:

NE662M16-T3 Applications

* from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication s

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Datasheet Details

Part number
NE662M16-T3
Manufacturer
NEC
File Size
63.42 KB
Datasheet
NE662M16-T3_NEC.pdf
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON HIGH FREQUENCY TRANSISTOR NEC
NEC NE662M16-T3-like datasheet